Polarizing plate and method of manufacturing the same

ABSTRACT

A polarizing plate having an excellent optical property and a method of manufacturing the same are disclosed. The polarizing plate includes: a transparent substrate  11  transmitting light in a used bandwidth; an absorbing layer  12  having at least a metal-containing semiconductor layer containing a metal, the absorbing layer being arranged as a one-dimensional lattice shaped wire-grid structure having a pitch smaller than the wavelength of the light in the used bandwidth; a dielectric layer  13  arranged as a one-dimensional lattice shaped wire-grid structure having a pitch smaller than the wavelength of light in the used bandwidth; and a reflective layer  14  arranged as a one-dimensional lattice shaped wire-grid structure having a pitch smaller than the wavelength of light in the used bandwidth, wherein the absorbing layer  12 , the dielectric layer  13  and the reflective layer  14  are layered on the transparent substrate  11  in this or reversed order.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a polarizing plate for absorbing one ofmutually orthogonal polarized components (P-polarized wave andS-polarized wave) and transmitting the other, and a method formanufacturing the same.

2. Description of the Related Art

The image formation principle of liquid crystal display devicesessentially requires a polarizing plate provided on a surface of aliquid crystal panel. The function of the polarizing plate is to absorbone of mutually orthogonal polarized components (P-polarized wave andS-polarized wave) and to transmit the other.

Dichroic polarizing plates containing iodine or dye type organic polymermaterials in films have been widely used as this kind of polarizingplate. These polarizing plates are generally manufactured by using amethod including steps of dyeing a polyvinyl alcohol film with dichroicmaterial such as iodine, performing crosslinking with a crosslinkingagent and then performing uniaxial stretching. The dichroic polarizingplates tend to shrink since the manufacturing process includes thisstretching step. In addition, because the polyvinyl alcohol film employshydrophilic polymer, it is highly deformable especially under humidifiedconditions. Moreover, using a film as a base results in insufficientmechanical strength of the device, which may require a transparentprotective film glued thereto.

In recent years, the liquid crystal display devices have been widelyused in many purposes and the functionalities of them have beensophisticated. Accordingly, high reliability and durability are requiredon each device constituting the liquid crystal display devices. Forexample, in the case of liquid crystal display devices using a lightsource with a large luminous energy such as transmissive liquid crystalprojectors, polarizing plates are exposed to intensive radiant rays.Consequently, the polarizing plates used for these are required to havean excellent heat-resisting property. However, since the above describedfilm-based polarizing plates are made of organic materials, a limitationexists in enhancement of the property.

An inorganic polarizing plate having an excellent eat-resisting propertyis commercially available from Corning Incorporated in the USA under thetrade name of “Polarcor”. This polarizing plate has a structure in whichsilver particles are diffused into glass and uses no organic materialsuch as a film. The principle of this utilizes plasma resonanceabsorption of island particles. Particularly, it utilizes lightabsorption by surface plasma resonance occurring when light enters intothe island particles of precious metals or transition metals and theabsorption wavelength depends on the shapes of the particles and thepermittivity therearound. Using elliptical-shaped island particles candifferentiate the resonance wavelengths in major and minor axisdirections, thereby achieving a polarizing property. In particular, theyabsorb polarized components parallel to the major axis and transmitpolarized components parallel to the minor axis in long wavelengthrange. However, the Polarcor, which only polarizes lights in thewavelength range near infrared region, does not cover visible lightrange required in liquid crystal displays. This is due to the physicalproperty of silver used for the island particles.

Patent literature (PTL) 1 discloses a UV polarizing plate using silveras metal particles, wherein the particles are educed in glass by heatreduction to apply the above described principle. In this case, it issuggested that absorption in minor axis is utilized in contrast to theabove mentioned Polarcor. Although FIG. 1 of PTL 1 shows a function as apolarizing plate near 400 nm, the extinction ratio is small and theabsorbable wavelength rage is extremely narrow such that the polarizingplate cannot cover the entire visible light range even if Polarcor andthe technologies of PTL 1 are combined.

Non patent literature (NPL) 1 theoretically analyzes inorganicpolarizing plates using plasma resonance of metal island particles. Thisliterature describes that resonance wavelength of aluminum particles isapproximately 200 nm shorter than that of silver particles, so that apolarizing plate covering visible light range can possibly bemanufactured by using aluminum particles.

NPL 2 discloses some methods of manufacturing a polarizing plate byusing aluminum particles According to this literature, silicate-basedglasses are not preferable for the substrate since aluminum reacts withthe glasses and calcium aluminoborate glasses are suitable for thispurpose (paragraphs 0018 and 0019). This limitation is at an economicdisadvantage since the silicate-based glasses are widely spread asoptical glasses and reliable products of them can be obtained at lowcost. The literature also describes a method for forming islandparticles by etching a resist pattern (paragraphs 0037 and 0038). Ingeneral, a polarizing plate used in a projector is required to have asize of several centimeters and a high extinction ratio. Consequently,in the case of a polarizing plate for visible light, the resist patternshould have a size of several tens nanometers in order to besufficiently shorter than visible light wavelengths and the highextinction ratio requires a high density pattern. Moreover, when used ina projector, a large area is required. In the described method offorming a high-density micro pattern by lithography, however, electronbeam drawing technology and the like should be used to obtain theabove-described pattern. The electron beam drawing technology, whichdraws respective patterns by electron beam, is not practical due to thelow productivity thereof.

Although PTL 2 describes that aluminum are removed with chlorine plasma,in this case, chloride is likely to adhere to the aluminum patternetched in such a manner. The chloride can be removed with a commerciallyavailable wet etchant (for example, SST-A2 available from Tokyo OhkaKogyo Co., Ltd. in Japan); however, the etchant of this kind reactingwith aluminum chloride also reacts with aluminum with a lower etchingrate, making it difficult to form a desired pattern by using thedescribed method.

In addition, PTL 2 also describes another method in which aluminum isdeposited on a photo resist by glancing angle deposition (GLDA) and thenthe photo resist is removed (paragraphs 0045 and 0047). In this kind ofmethod, it is contemplated that aluminum must be deposited also on thesubstrate surface in a certain extent to obtain an adhesion between thesubstrate and the aluminum. This means, however, the shape of thedeposited aluminum film will differ from prolate sphere includingprolate spheroid described as a suitable shape in paragraph 0015. Asdescribed in paragraph 0047, over-deposited materials are removed byanisotropic etching perpendicular to the surface. The shape anisotropyof aluminum is essential for the function of the polarizing plate. Ittherefore seems to be necessary that the amounts of aluminum depositedon resist part and substrate surface should be adjusted in order toobtain a desired shape by etching; however, controlling these in a sizeless than sub-micron size, such as 0.05 μm as described in paragraph0047 is extremely difficult. Consequently, the productivity of thismanufacturing method is suspicious. In addition, although the polarizingplate is required to have a property of a high transmittance intransmission axis direction, in the case of glass substrate, reflectionof several percent from the glass interface is usually unavoidable,making it difficult to obtain the high transmittance.

PTL 3 discloses a method of forming a polarizing plate by glancing angledeposition (GLDA). This method, which obtains a polarizing property byforming micro-prismatic structures by glancing angle deposition ofmaterials transparent and opaque to wavelengths in used bandwidth, seemsto have a high productivity since micro patterns can be obtained by aprocess easier than the process explained in PTL 1. It should be notedthat, the aspect ratio of the micro-prismatic structures of the materialopaque to wavelengths in used bandwidth, the distance between eachmicro-prismatic structure and the linearity of the micro-prismaticstructures are essential parameters Thr obtaining an excellentpolarizing property and these parameters should be intentionallycontrolled also from a view point of property reproducibility; however,intentionally controlling these parameters is difficult since thismethod utilizes a phenomenon in which initial deposition layer of vaporparticles blocks the subsequent vapor particles so that the prismaticstructures are obtained by the lack of deposition of the vapor particlesdue to this Shading. For dealing this problem, described is a method ofproviding polishing traces on a substrate by a rubbing process beforethe vapor deposition. Since the particle diameter of the vapored film isat most several tens nanometers, pitches less than sub-micron sizeshould be intentionally produced by polishing in order to control theanisotropy of the particles. Unfortunately, ordinary polishing sheets,having a limitation of sub-microns, cannot easily produce suchmicroscopic polishing traces. Furthermore, although the resonancewavelength of Al particles strongly depends on the refractive indextherearound and how to combine the transparent and opaque materials isimportant in this case, no combination is disclosed in PTL 3 forobtaining an excellent polarizing property in visible light range. Inaddition, similarly to the case of PTL 1, when using a glass for thesubstrate, reflection of several percent from the glass interface isunavoidable.

NPL 2 discloses a polarizing plate named Lamipol for infraredcommunication. This has a laminated structure of Al and SiO₂ and,according to this literature, has an extremely high extinction ratio.NPL 3 describes that using Ge instead of Al, which is light absorbingpart of Lamipol, can achieve a high extinction ratio at wavelengths lessthan 1 μm. Te (tellurium) is also expected to achieve a high extinctionratio, according to FIG. 3 of the NPL 3. Although Lamipol is anabsorbing typed polarizing plate achieving a high extinction ratio asdescribed above, since the size of the light receiving surface is thelamination thickness of the light absorbing and transmitting materials,Lamipol is not suitable for use in projectors requiring the size ofseveral centimeters square.

PTL 4 describes a polarizing plate combining a wire grid structure andan absorbing film. In the case of using a metal or semiconductormaterial as the absorbing film, the property of the film stronglydepends on the optical property of the material such that reflectance ina particular range can be controlled by adjusting the thickness of adielectric layer between the material and the wire grid. However, thisadjustment is difficult to be performed in a wide wavelength range.

Although the bandwidth can be expanded by using Ta or Ge having a highabsorption capability, this makes absorption in transmittance axisdirection be larger, thus reducing transmittance in transmission axisdirection, which is one of an important property of polarizing plates.

Application of fine particles to the absorption film has been proposedto solve the above-problem. However, conventional methods which directlydeposit an absorbing film by using glancing angle deposition, which relyon self-organization by shadowing by the deposited absorbing film, arestrongly affected by physical property of the material itself orroughness of the substrate, making it difficult to control the absorbingproperty.

CITATION LIST Patent Literatures

-   PTL 1: U.S. Pat. No. 6,772,608-   PTL 2: Japanese Unexamined Patent Publication No. 2000-1472.53-   PTL 3: Japanese Unexamined Patent Publication No. 2002-372620-   PTL 4: Japanese Unexamined Patent Publication No. 2008-216957

Non Patent Literatures

-   NPL 1: J. Opt. Soc. Am. A Vol. 8, No. 4 619-624-   NPL 2: Applied Optics Vol. 25 No. 2 1986 311-314-   NPL 3: J. Lightwave Tec. Vol. 15 No. 6 1997 1042-1050

Having regard to the above, an object of the present invention is toprovide a polarizing plate having an excellent optical property and amethod of manufacturing the same.

SUMMARY OF THE INVENTION

The inventors of the present invention found out that an excellentoptical property can be obtained with a reduced reflectance by using ametal-containing semiconductor layer containing a metal as an absorbinglayer to complete the present invention.

A polarizing plate according to an aspect of the present inventionincludes: a transparent substrate transmitting light in a usedbandwidth; an absorbing layer having at least a metal-containingsemiconductor layer containing a metal, the absorbing layer beingarranged as a one-dimensional lattice shaped wire-grid structure havinga pitch smaller than the wavelength of the light in the used bandwidth;and a reflective layer arranged as a one-dimensional lattice shapedwire-grid structure having a pitch smaller than the wavelength of lightin the used bandwidth, wherein the absorbing layer and the reflectivelayer are layered on the transparent substrate in this order, or thereflective layer and the absorbing layer are layered on the transparentsubstrate in this order.

A method of manufacturing a polarizing plate according to an aspect ofthe present invention includes steps of: preparing a transparentsubstrate transmitting light in a used bandwidth; layering an absorbinglayer having at least a metal-containing semiconductor layer, and areflective layer in this order or in the opposite order; and forming aone-dimensional lattice shaped wire-grid structure having a pitchsmaller than the wavelength of the light in the used bandwidth byetching.

The present invention can achieve an excellent optical property by usinga metal-containing semiconductor layer containing a metal having a highextinction coefficient representing light absorption capability, therebyimproving light-absorbing property in comparison with semiconductorlayers and reducing reflectance in comparison with metal layers.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will now be described, by way of example only, withreference to the drawings, in which:

FIG. 1 is a schematic cross sectional view of a first polarizing plateaccording to an embodiment of the present invention.

FIG. 2 is a schematic cross sectional view of a second polarizing plateaccording to an embodiment of the present invention.

FIG. 3 is a schematic cross sectional view of a conventional polarizingplate.

FIG. 4(A) is a graph showing the optical property (transmittance orreflectance) of the polarizing plate of the comparative example and FIG.4(B) is a graph showing a part of FIG. 4(A) by changing the scale of thevertical axis.

FIG. 5 is a schematic cross sectional view of the polarizing plate ofExample 1.

FIG. 6(A) is a graph showing the optical property (transmittance orreflectance) of the polarizing plate of Example 1 and FIG. 6(B) is agraph showing a part a FIG. 6(A) by changing the scale of the verticalaxis.

FIG. 7 is a schematic cross sectional view of the polarizing plate usedin the first simulation.

FIG. 8 is a schematic cross sectional view of the polarizing plate usedin the second simulation.

FIG. 9 is a graph showing the optical property of the polarizing plateof the first simulation when using 5 atomic percent of Fe-containing Sias the absorbing layer.

FIG. 10 is a graph showing the optical property of the polarizing plateof the first simulation when using 10 atomic percent of Fe-containing Sias the absorbing layer.

FIG. 11 is a graph showing the optical property of the polarizing plateof the second simulation when using 5 atomic percent of Fe-containing Sias the absorbing layer.

FIG. 12 is a graph showing the optical property of the polarizing plateof the second simulation when using 10 atomic percent of Fe-containingSi as the absorbing layer.

FIG. 13(A) is a graph showing etching depth versus etching time and FIG.13(B) is a table showing calculation results.

FIG. 14 is a schematic cross sectional view of the polarizing plate usedin the simulation of Example 4.

FIG. 15 is a graph showing the optical property with the film thicknessof the dielectric, layer being 5 nm.

FIG. 16 is a graph showing the optical property with the film thicknessof the dielectric layer being 20 nm.

FIG. 17 is a graph showing the optical property with the film thicknessof the dielectric layer being 35 nm.

FIG. 18 is a graph showing the optical property with the film thicknessof the dielectric layer being 50 μm.

FIG. 19 is a schematic cross sectional view of the polarizing plate ofExample 5.

FIG. 20 is a graph showing the optical property of a polarizing platewith absorbing layer being Si.

FIG. 21 is a graph showing the optical property of a polarizing platewith an absorbing layer being 20 atomic percent of Ta-containing Si.

FIG. 22 is a graph showing the optical property of a polarizing platewith an absorbing layer being 25 atomic percent of Ta-containing Si.

FIG. 23 is a graph showing the optical property of a polarizing platewith an absorbing layer being 33 atomic percent of Ta-containing Si.

FIG. 24 is a graph showing absorption axis reflectances of polarizingplates with absorbing layers being Si, 20 atomic percent ofTa-containing Si, 25 atomic percent of Ta-containing Si and 33 atomicpercent of Ta-containing Si, respectively.

FIG. 25 is a graph showing differences between maximum values andminimum values of absorption axis reflectances relative to atomicpercentages of Ta in a measured wavelength range.

FIG. 26 is a graph showing transmission axis transmittances ofpolarizing plates with absorbing layers being Si, 20 atomic percent ofTa-containing Si, 25 atomic percent of Ta-containing Si and 33 atomicpercent of Ta-containing Si, respectively.

FIG. 27 is a graph showing average values of transmission axistransmittances relative to atomic percentages of Ta in a measuredwavelength range.

FIG. 28 is a schematic cross sectional view of the polarizing plate ofExample 6.

FIG. 29 is a graph showing absorption axis reflectances of polarizingplates with the film thickness of the dielectric layers being 15 nm, 5.0nm, 7.5 nm and 10.0 nm.

FIG. 30 is a schematic cross sectional view of the polarizing plate ofExample 7.

FIG. 31 is an SEM image of a cross-section of the polarizing plate ofExample 7.

FIG. 32(A) is a graph showing the optical property of the polarizingplate of Example 7 and FIG. 32(B) is a table showing average values oftransmission axis transmittance Tp, absorption axis transmittance Ts,contrast CR (Tp/Ts), transmission axis reflectance Rp and absorptionaxis reflectance Rs in respective wavelength ranges of red (R), green(G) and blue (B).

FIG. 33 is a schematic cross sectional view of the polarizing plate ofExample 8.

FIG. 34 is an SEM image of a cross-section of the polarizing plate ofExample 8.

FIG. 35(A) is a graph showing the optical property of the polarizingplate of Example 8 and FIG. 35(B) is a table showing average values oftransmission axis transmittance Tp, absorption axis transmittance Ts,contrast CR (Tp/Ts), transmission axis reflectance Rp and absorptionaxis reflectance Rs in respective wavelength ranges of red (R), green(G) and blue (B).

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will now be more particularlydescribed with reference to the accompanying drawings according to thefollowing order.

1. Constitution of a Polarizing Plate 2. Manufacturing Method of aPolarizing Plate 3. Examples 1. CONSTITUTION OF A POLARIZING PLATE

A polarizing plate according to an embodiment of the present inventionincludes: a transparent substrate transmitting light in a usedbandwidth; an absorbing layer having at least a metal-containingsemiconductor layer containing a metal, the absorbing layer beingarranged as a one-dimensional lattice shaped wire-grid structure havinga pitch smaller than the wavelength of the light in the used bandwidth;and a reflective layer arranged as a one-dimensional lattice shapedwire-grid structure having a pitch smaller than the wavelength of lightin the used bandwidth, wherein the absorbing layer and the reflectivelayer are layered on the transparent substrate in this order, or thereflective layer and the absorbing layer are layered on the transparentsubstrate in this order. In other words, the polarizing plate accordingto this invention may be constituted by forming the absorbing layer andreflective layer in this order in the light incident direction. Adielectric layer arranged as a one-dimensional lattice shaped wire-gridstructure having a pitch smaller than the wavelength of light in theused bandwidth may be formed between the absorbing layer and thereflective layer.

FIG. 1 is a schematic cross sectional view of a first polarizing plateaccording to an embodiment of the present invention. As shown in FIG. 1,the first polarizing plate includes: a transparent substrate 11transmitting light in a used bandwidth; an absorbing layer 12 having atleast a metal-containing semiconductor layer containing a metal, theabsorbing layer being arranged as a one-dimensional lattice shapedwire-grid structure having a pitch smaller than the wavelength of thelight in the used bandwidth; a dielectric layer 13 arranged as aone-dimensional lattice shaped wire-grid structure having a pitchsmaller than the wavelength of light in the used bandwidth; and areflective layer 14 arranged as a one-dimensional lattice shapedwire-grid structure having a pitch smaller than the wavelength of lightin the used bandwidth, wherein the absorbing layer 12, the dielectriclayer 13 and the reflective layer 14 are layered on the transparentsubstrate 11 in this order. That is, the first polarizing plate has aone-dimensional lattice shaped wire-grid structure in which theconvexities formed by layering the absorbing layer 12, the dielectriclayer 13 and the reflective layer 14 in this order from the transparentsubstrate 11 are arranged with a regular interval on the transparentsubstrate 11.

FIG. 2 is a schematic cross sectional view of a second polarizing plateaccording to an embodiment of the present invention. As shown in FIG. 2,the first polarizing plate includes: a transparent substrate 11transmitting light in a used bandwidth; an absorbing layer 12 having atleast a metal-containing semiconductor layer containing a metal, theabsorbing layer being arranged as a one-dimensional lattice shapedwire-grid structure having a pitch smaller than the wavelength of thelight in the used bandwidth; a dielectric layer 13 arranged as aone-dimensional lattice shaped wire-grid structure having a pitchsmaller than the wavelength of light in the used bandwidth; and areflective layer 14 arranged as a one-dimensional lattice shapedwire-grid structure having a pitch smaller than the wavelength of lightin the used bandwidth, wherein the reflective layer 14 the dielectriclayer 13 and the absorbing layer 12, are layered on the transparentsubstrate 11 in this order. That is, the second polarizing plate has aone-dimensional lattice shaped wire-grid structure in which theconvexities formed by layering the reflective layer 14, the dielectriclayer 13 and the absorbing layer 12 in this order from the transparentsubstrate II are arranged with a regular interval on the transparentsubstrate 11.

In the first or second polarizing plate, a width of at least a portionof the absorbing layer 12 or dielectric layer 13 in the convexities ofthe one-dimensional lattice shaped wire-grid structure is preferablynarrower than that of the reflective layer 14. In particular, the widthof the absorbing layer 12 is preferably narrower than that of thereflective layer 14. This configuration can increase the transmittanceand decrease the reflectance of the polarizing plate.

The transparent substrate 11 is formed of a material transparent to thelight in the used optical bandwidth and having a refractive index of 1.1to 2.2, such as glass, sapphire and crystal. In this embodiment, it ispreferable to employ quartz crystal or sapphire having a high thermalconductivity as the material to form the transparent substrate 11. Thisachieves a high light-fastness against strong light, thereby realizing apolarizing plate suitable for use in an optical engine of a projectorthat produces large amount of heat.

In the case that the transparent substrate 11 is formed of an opticallyactive crystal such as crystal quartz, excellent optical properties canbe obtained by arranging the grid-shaped convexities in parallel orperpendicular direction relative to the optical axis of the crystal. The“optical axis” used herein means a directional axis that minimizes thedifference between refractive indices of ordinary ray (O) andextraordinary ray (E) of the light travelling along the directionthereof.

It should be noted that, depending on the application of the polarizingplate, glass, particularly quartz (refractive index of 1.46) orsoda-lime glass (refractive index of 1.51) may be used. Since thecomponent composition of the glass material has no special limitation,inexpensive glass materials such as silicate glass can be used and thusproducing cost can be reduced.

The absorbing layer 12 comprises more than one layer including at leasta metal-containing semiconductor layer containing a metal. Themetal-containing semiconductor can improve light-absorbing property incomparison with semiconductor layers and reduce reflectance incomparison with metal layers since it contains a metal having a highextinction coefficient representing light absorption capability.

Examples of semiconductor materials for the metal-containingsemiconductor layer include Si, Ge, Te and ZnO. Since the band gapenergy of the semiconductor material affects the absorption effect, theband gap energy of the semiconductor must be below the used opticalbandwidth. For example, when used with visible light, a semiconductormaterial absorbing wavelengths 400 nm or more, therefore having a bandgap of 3.1 eV or less must be used. Furthermore, examples of the metalcontained in the metal-containing semiconductor layer include Ta, Al,Ag, Cu, Au, Mo, Cr, Ti, W, Ni, Fe, Sn and Nb.

Preferably, the metal content of the metal-containing semiconductorlayer is 50 atomic percent or less. Excessive amount of metal contentcontained in the metal-containing semiconductor layer might reducetransmittance. Furthermore, a preferable semiconductor material of themetal-containing semiconductor is a material easily deposited to form afilm such as Si. More preferable combinations for the metal-containingsemiconductor layer include Fe-containing Si (Si which contains Fe) andTa-containing Si (Si which contains Ta).

In addition to the metal-containing semiconductor layer, the absorbinglayer 12 further includes a metal layer and the width of the metal layeris preferably narrower than that of the reflective layer 14. This canreduce the reflectance of the polarizing plate. The width of theabsorbing layer 12 can be controlled by etching and the amount of sideetching can be controlled with etching gas pressure and He gas pressurefor cooling the substrate.

In addition to the metal-containing semiconductor layer, the absorbinglayer 12 preferably includes a metal layer or a semiconductor layer.This can suppress reflectance, improve transmittance and increasecontrast (extinction ratio: transmission axis transmittance/absorptionaxis transmittance).

In the case of using Fe-containing Si as the metal-containingsemiconductor layer, the Fe content is preferably 50 atomic percent orless. Fe content more than 50 atomic percent will make etching difficulteven if gaseous species are altered. Furthermore, 10 atomic percent orless of the content is more preferable in order to apply CF₄ etchingwidely used in semiconductor etching processes.

In the case of using Fe-containing Si as the metal-containingsemiconductor layer, it is preferable to form a Ta layer in theabsorbing layer 12 in order to improve the reduction effect of thereflectance. In addition, when forming the Ta layer, it is preferable toform the absorbing layer 12 in the order of the Ta layer and themetal-containing semiconductor layer in the light incident direction.The film thickness of the metal-containing semiconductor layer ispreferably thicker than that of the Ta layer. This can achieve a lowreflectance and a high transmittance. This can also improve absorptionand interference effects to increase the contrast (extinction ratio:transmission axis transmittance/absorption axis transmittance).

In the case of using Ta-containing Si as the metal-containingsemiconductor layer, the Ta content is preferably 40 atomic percent orless. In the range of the Ta content of 40 atomic percent or less, thereflectance is 4% or less, which is same as a glass interface level, andthe transmittance is high such that a reduced reflectance and a hightransmittance can be maintained in practice.

In the case of using Ta-containing Si as the metal-containingsemiconductor layer, it is preferable to form a Ta layer in theabsorbing layer 12 in order to improve the reduction effect of thereflectance. In addition, when forming the Ta layer, it is preferable toform the absorbing layer 12 in the order of the Ta layer and themetal-containing semiconductor layer in the light incident direction.The film thickness of the metal-containing semiconductor layer ispreferably thicker than that of the Ta layer. This can achieve a lowreflectance and a high transmittance. This can also improve absorptionand interference effects to increase the contrast (extinction ratio:transmission axis transmittance/absorption axis transmittance).

It is preferable to form the absorbing layer 12 as a high-density filmby means of vapor deposition or spattering. The high-density film willimprove the thermal conductivity and heat dissipation.

The dielectric layer 13 is formed to have a film thickness that shifts aphase of a polarized light transmitted through the absorbing layer 12and reflected at the reflective layer 14 by a half wavelength relativeto the light entered from the transparent substrate 11. Actual filmthickness is appropriately determined within the range of 1 to 500 nmcapable of adjusting the phase to enhance the interference effect. Inthe present embodiment, since the absorbing layer 12 absorbs thereflected light, the contrast will be improved without optimizing thefilm thickness, so that it may be practically determined by balancing adesired polarizing property and an actual manufacturing process.

As for the material constituting the dielectric layer 13, conventionalmaterials including SiO₂, Al₂O₃ and MgF₂ can be used. The refractiveindex of the dielectric, layer 13 is preferably in the range of 1.0 to2.5. The property of the polarizing plate may be controlled by thematerial of the dielectric layer 13 since the optical property of theabsorbing layer 12 is also affected by the refractive index therearound.

The reflective layer 14 is formed on the dielectric layer 13 byarranging belt-shaped metal films extending in Y direction, which is theabsorption axis of the dielectric layer 13. That is, the reflectivelayer 14 has a function as a wire grid polarizer that attenuates thepolarized wave having an electric field component parallel to thelongitudinal direction (Y-axis direction) of the wire grid (TE wave(S-polarized wave)) of the light entered from the transparent substrate11 and transmits the polarized wave having an electric field componentperpendicular to the longitudinal direction (X-axis direction) of thewire grid (TM wave (P-polarized wave)).

The material constituting the reflective layer 14 is not speciallylimited as long as it reflects the light in the used bandwidth; forexample, simple substances such as Al, Ag, Cu, Mo, Cr, Ti, Ni, W, Fe,Si, Ge and Te, alloys of these substances and semiconductor materialsmay be used. Instead of metal materials, it can be constituted byinorganic film other than metal or resin film formed to have a surfacewith a high reflectance by coloring, for example.

The pitch, line width/pitch, film height (thickness, grid depth) andfilm length (grid length) of the reflective layer 14 are preferably inthe following ranges.

-   -   0.05 μm<pitch<0.8 μm    -   0.1<(line width/pitch)<0.9    -   0.01 μm<height<1 μm    -   0.05 μm<film length

It is preferable to provide a protective film covering the surfaces ofthe transparent substrate 11 and the grid-shaped convexities as long asthe change of the optical property has no effect on practical use. Forexample, depositing SiO₂ will improve reliability such as moistureresistance. The protective film is preferably formed by plasma Chemicalvapor deposition (CVD). The plasma CVD can deposit the protective filmalso in the gaps between the grid-shaped convexities.

The polarizing plate in this constitution can attenuate the polarizedwave having an electric field component parallel to the grid of thereflective layer (TE wave (S-polarized wave)) and transmit the polarizedwave having an electric field component perpendicular to the grid of thereflective layer (TM wave (P-polarized wave)) by utilizing fouractivities of transmission, reflection, interference and selective lightabsorption of the polarized waves. In other words, TE wave is attenuatedby the selective light absorbing effect of the absorbing layer 12 and TEwave transmitted through the absorbing layer 12 and the dielectric layer13 is reflected by the grid-shaped reflective layer 14 that functions asa wire grid. By appropriately adjusting the thickness and refractiveindex of the dielectric layer 13, a part of the TE wave reflected by thereflective layer 14 and being transmitted through the absorbing layer 12can be reflected back to the reflective layer 14, and the lighttransmitted through the absorbing layer 12 can be attenuated byinterference. A desired polarizing property can be obtained by thisselective attenuation of TE wave.

By using a metal-containing semiconductor layer as the light absorbinglayer containing a metal having a high extinction coefficientrepresenting light absorption capability, the polarizing plate of thepresent embodiment can improve light-absorbing property in comparisonwith semiconductor layers and reduce reflectance in comparison withsemiconductor layers to achieve an excellent optical property. Since thedesign range of the present polarizing plate is wider than that ofconventional ones, it is possible to provide a polarizing plate having adesired extinction ratio in a visible light range.

Moreover, the polarizing plate of the present embodiment, constituted byinorganic material having a durability higher than that of organicmaterial, has an improved reliability with a high light-fastness againststrong light such as a light used in liquid crystal projectors.Furthermore, the polarizing plate of the present embodiment, capable ofreducing reflectance in a wide wavelength range, can be applied togeneral purpose polarizing plates such as polarizing filters for camerasand polarizing plates for liquid crystal television monitors.

2. MANUFACTURING METHOD OF A POLARIZING PLATE

A manufacturing method of a polarizing plate according to the presentembodiment will be explained hereinafter. A method of manufacturing apolarizing plate according to the present embodiment includes steps of:preparing a transparent substrate transmitting light in a usedbandwidth; layering an absorbing layer having at least ametal-containing semiconductor layer, and a reflective layer in thisorder or in the opposite order; and forming a one-dimensional latticeshaped wire-grid structure having a pitch smaller than the wavelength ofthe light in the used bandwidth by etching.

The method of manufacturing the first polarizing plate shown in FIG. 1will be explained hereinafter. In the manufacturing method of the firstpolarizing plate, firstly, the absorbing layer 12, the dielectric layer13 and the reflective layer 14 are deposited on the transparentsubstrate 11 in this order.

The absorbing layer 12 is deposited by means of vapor deposition orspattering. More particularly, the deposition of the absorbing layer 12is conducted by positioning the transparent substrate 11 against atarget and making argon particles to collide the target, such that thetarget material removed by the collision impact is deposited on thetransparent substrate 11. The metal-containing semiconductor layer canbe deposited by using a metal-containing semiconductor target such as anFe-containing silicon target and a Ta-containing silicon target.

In addition, the dielectric layer 13 and the reflective layer 14 can beformed by a typical vacuum deposition method including sputteringmethod, vapor growth method and vapor deposition method, or sol-gelmethod (for example, a method in which a sol is coated by spin coatingand then gelated by thermosetting).

A grid-shaped mask pattern is formed by nanoimprint or lithography onthe reflective layer 14 deposited by the process described above andthen grid-shaped convexities are formed by dry etching. Oases usable inthe dry etching include Ar/O₂ for anti-reflecting coating (BARC),Cl₂/BCl₃ for AlSi and CF₄/Ar for SiO₂, Si and Ta. Optimizing etchingconditions (gas flow rate, gas pressure, power and cooling temperatureof the substrate) will achieve a grid shape having a high verticality.The width (in X-axis direction) of the absorbing layer 12 can also beadjusted by the etching conditions.

In addition, when etching the grid-shaped convexities between grids, atransparent material easily etched by CF₄ such as SiO₂ and Ta₂O₅ may bedeposited on the substrate within a range having no effect on thepolarizing performance. The material may be removed by etching partiallyor entirely.

In the case when Al or AlSi is used for the reflective layer 14,materials capable of being etched by fluorine are preferably selected asmaterials for the absorbing layer 12 and the dielectric layer 13. Thisresults in a high etching selectivity, thereby widening the range offilm thickness design value of the absorbing layer 12 and the dielectriclayer 13, which is advantageous in view of process construction.

It is possible to deposit a protective film such as an SiO₂ film on thetop portion for improving reliability such as moisture resistance aslong as the change of the optical property has no effect on practicaluse.

3. EXAMPLES

Examples of the present invention will be explained hereinafter. Inthese examples, polarizing plates having a metal-containingsemiconductor layers as absorbing layers were formed and their opticalproperties were evaluated. It should be noted that the present inventionis not limited to these examples,

Comparative Example

FIG. 3 is a schematic cross sectional view of a conventional polarizingplate. Firstly, 20 nm of Ta, 50 nm of SiOx and 60 nm of Al weresequentially deposited on a transparent substrate by spattering methodand a grid structure having a pitch of 140 nm was formed by dry etching.

FIG. 4(A) is a graph showing the optical property (transmittance orreflectance) of the polarizing plate of the comparative example and FIG.4(B) is a graph showing a part of FIG. 4(A) by changing the scale of thevertical axis. Although Ta works effectively as a light-absorbing film,the absolute value of the reflectance of Ta is around 10% as shown inFIGS. 4(A) and 4(B), which is much higher than the reflectivities oforganic polarizing plates used in ordinal liquid crystal televisionmonitors and liquid crystal monitors. It is therefore difficult forconventional polarizing plates to achieve a low reflectance in a widevisible wavelength range.

Example 1

FIG. 5 is a schematic cross sectional view of the polarizing plate ofExample 1. Firstly, 10 nm of Ta, 15 nm of Si with 5% Fe, 30 nm of SiOxand 60 nm of Al were sequentially deposited on a transparent substrateby spattering method and a grid structure having a pitch of 140 nm wasformed by dry etching. Si with 5% Fe was deposited by using a silicontarget containing 5 atomic percent of Fe.

FIG. 6(A) is a graph showing the optical property (transmittance orreflectance) of the polarizing plate of Example 1 and FIG. 6(B) is agraph showing a part of FIG. 6(A) by changing the scale of the verticalaxis. As can be seen from the comparison between FIG. 6(B) and FIG.4(B), the polarizing plate of Example 1 could remarkably reduce thereflectance. In particular, the reflectivity in the green range withhigh luminous sensitivity could be reduced to 2% or less. In addition,the polarizing plate of Example 1 could reduce the reflectance in a widevisible wavelength range as compared with the comparative example. Thisrevealed that the reflectance can be remarkably reduced by using ametal-containing semiconductor layer as an absorbing layer.

Example 2

Next, the effect of reflectance reduction of metal-containingsemiconductor layer was validated by a simulation based on RigorousCoupled Wave Analysis (RCWA) method.

FIG. 7 is a schematic cross sectional view of the polarizing plate usedin the first simulation and FIG. 8 is a schematic cross sectional viewof the polarizing plate used in the second simulation. The polarizingplate used in the first simulation includes a reflective layer, adielectric layer and an absorbing layer firmed on a substrate in thisorder equally as the second polarizing plate shown in FIG. 2. Theabsorbing layer is formed of Fe-containing Si, the dielectric layer isformed of SiO₂ and the reflective layer is formed of Al. The polarizingplate used in the second simulation includes an absorbing layer, adielectric layer and a reflective layer formed on a substrate in thisorder equally as the first polarizing plate shown in FIG. 1. Theabsorbing layer is formed of Fe-containing Si, the dielectric layer isformed of SiO₂ and the reflective layer is formed of Al.

FIG. 9 is a graph showing the optical property of the polarizing plateof the first simulation when using 5 atomic percent of Fe-containing Si(silicon which contains Fe by 5 atomic percent) as the absorbing layer.In this simulation, the polarizing plate with a grid structure having apitch of 140 nm was formed by layering 100 nm of Al, 20 nm of SiO₂ and25 nm of 5 atomic percent of Fe-containing Si on the substrate in thisorder.

FIG. 10 is a graph showing the optical property of the polarizing plateof the first simulation when using 10 atomic percent of Fe-containing Sias the absorbing layer. In this simulation, the polarizing plate with agrid structure having a pitch of 140 nm was formed by layering 100 nm ofAl, 50 nm of SiO₂ and 15 nm of 10 atomic percent of Fe-containing Si onthe substrate in this order.

FIG. 11 is a graph showing the optical property of the polarizing plateof the second simulation when using 5 atomic percent of Fe-containing Sias the absorbing layer. In this simulation, the polarizing plate with agrid structure having a pitch of 140 nm was formed by layering 25 nm of5 atomic percent of Fe-containing Si, 20 nm of SiO₂ and 100 nm of Al onthe substrate in this order.

FIG. 12 is a graph showing the optical property of the polarizing plateof the second simulation when using 10 atomic percent of Fe-containingSi as the absorbing layer. In this simulation, the polarizing plate witha grid structure having a pitch of 140 not was formed by layering 15 nmof 10 atomic percent of Fe-containing Si, 50 nm of SiO₂ and 100 nm of Alon the substrate in this order.

As shown in FIGS. 9 and 11, when using 5 atomic percent of Fe-containingSi for the absorbing layer, although the reduction in reflectance in awide wavelength range is not sufficient, the reduction in reflectance ingreen range with 500 nm wavelength, which is important for visible lightpolarizing plates, is sufficient such that this can be used as a channelpolarizing plate for liquid crystal projectors. For the reduction ofreflectance in a wide wavelength range, layering Ta is effective asshown in Example 1.

In addition, as shown in FIGS. 10 and 12, when using 10 atomic percentof Fe-containing Si for the absorbing layer, the reflectance in a widewavelength range can be reduced without layering Ta as shown inExample 1. This reveals that the reflectance can be adjusted by Fecontent such that increasing Fe content will improve the reflectancereduction effect in a wide wavelength range.

Example 3

Next, the effect of Fe content on actual manufacturing processes wasverified. In this verification, etching rates of Fe-containing Si weremeasured while using CF₄ as an etching gas, CF based etching gases arewidely used in fine etching of materials including MEMS andsemiconductor. Si with 5% (atomic percent) Fe, Si with 10% Fe and Siwith 15% Fe are deposited on individual pieces of glass substrates andthey were etched together.

FIG. 13(A) is a graph showing etching depth versus etching time and FIG.13(B) is a table showing calculation results for etching rates. As shownin FIG. 13(B) the etching rate of the Si with 5% Fe was 0.973 nm/sec,the etching rate of the Si with 10% Fe was 0.234 nm/sec and the Si with15% Fe was not etched. These results revealed that increasing Fe contentdecreases etching rate to make the material difficult to be etched.

Although Fe is reported Co be able to be etched by using an ammonia gasas an etching gas, for this structure, which is not a single Si layercontaining Fe but comprises of layered plural layers, the ammonia gas isnot suitable to use because of undesirable affections on other layers(corrosion by etching and etching anisotropy, for example). Existingmethod using argon gas to physically remove material would causere-attachment which degrades the property because this structureincludes fine pitches.

For the above reasons, it is considered that Fe content more than 50atomic percent is unpractical even if gaseous species are altered.Consequently, Fe content is preferably 50 atomic percent or less andmore practically, 10 atomic percent or less which can be etched by CF₄widely used in semiconductor etching processes. In the case of Fecontent of 10 atomic percent or less, it is preferable to provide a Talayer to improve reflectance reduction effect.

Example 4

Since interference effects among the reflective layer, the dielectriclayer and the absorbing layer still exist in the structure usingFe-containing Si as the absorbing layer, the film thickness of thedielectric layer would also affect the reflectance. In Example 4, thereflectance affected by the film thickness of the dielectric layer wasevaluated by a simulation based on RCWA method.

FIG. 14 is a schematic cross sectional view of the polarizing plate usedin the simulation of Example 4. The polarizing plate of Example 4,including a grid structure having a pitch of 140 nm, was formed bylayering 100 nm of Al, SiO₂ and 25 nm of 5 atomic percent ofFe-containing Si on the substrate in this order.

FIGS. 15 to 18 are graphs showing optical properties with the filmthickness of the dielectric layers being 5 am, 20 nm, 35 nm and 50 nm,respectively. As can be seen from FIGS. 15 to 18, the reflectance can bereduced by controlling the film thickness of the dielectric layer. Inthe cases of 5 nm, 20 nm, 35 nm and 50 nm dielectric layer filmthicknesses, the high reflectance can be reduced by layering Ta asexplained in Example 1.

In addition, FIGS. 15 to 18 revealed that increasing the dielectriclayer film thicknesses will improve absorption and interference effectsto increase the contrast (extinction ratio: transmission axistransmittance/absorption axis transmittance).

A thinner dielectric layer film thickness, however, is preferable inorder to advantageously reduce etching time in manufacturing process.For example, the polarizing plate used in the simulation shown in FIG.10, having a dielectric layer film thickness of 50 nm and employing 10atomic percent of Fe-containing Si, requires long etching time.

Example 5

Next, effects of Ta contents of polarizing plates using Ta-containing Sias absorbing layers are evaluated by producing actual samples.

FIG. 19 is a schematic cross sectional view of the polarizing plate ofExample 5. The polarizing plate of Example 5, including a grid structurehaving a pitch of 140 nm, was formed by layering 30 nm of absorbinglayer, 30 nm of SiO₂ and 40 nm of Al on the substrate in this order.

FIGS. 20 to 23 are graphs showing optical properties of polarizingplates with the absorbing layer being Si, 20 atomic percent ofTa-containing Si, 25 atomic percent of Ta-containing Si and 33 atomicpercent of Ta-containing Si, respectively.

FIG. 24 is a graph showing absorption axis reflectances of polarizingplates with absorbing layers being Si, 20 atomic percent ofTa-containing Si, 25 atomic percent of Ta-containing Si and 33 atomicpercent of Ta-containing Si, respectively. FIG. 25 is a graph showingdifferences between maximum values and minimum values of absorption axisreflectances relative to atomic percentages of Ta in a measuredwavelength range.

FIG. 26 is a graph showing transmission axis transmittances ofpolarizing plates with absorbing layers being Si, 20 atomic percent ofTa-containing Si, 25 atomic percent of Ta-containing Si and 33 atomicpercent of Ta-containing Si, respectively. FIG. 27 is a graph showingaverage values of transmission axis transmittances relative to atomicpercentages of Ta in a measured wavelength range.

As shown in FIG. 25, the difference between the maximum value and theminimum values of absorption axis reflectance in the measured wavelengthrange decreases as the Ta content increases, and a higher Ta content ismore preferable as an absorbing type polarizing plate. On the otherhand, as shown in FIG. 27, the average value of transmission axistransmittance in the measured wavelength range decreases as the Tacontent as the Ta content increases, and hence a lower Ta content isdesirable.

FIGS. 25 and 27 reveals that a Ta content of 40 atomic percent or lessis preferable. Comparing to a typical float glass having a reflectanceof 8%, a Ta content of less than 40 atomic percent will result in areflectance equal to or less than that of the glass and a hightransmittance. In other words, it can keep a reduced reflectance and ahigh transmittance in practice.

It should be noted that, although the structure of the first polarizingplate shown in FIG. 1 was used in Example 4, the same effect can also beobtained by using the structure of the second polarizing plate shown inFIG. 2.

Example 6

The reflectance affected by the film thickness of the dielectric layerwas explained by Example 4. In Example 6, the wavelength that minimizesthe reflectance affected by the film thickness of the dielectric layerwas evaluated by producing actual samples.

FIG. 28 is a schematic cross sectional view of the polarizing plate ofExample 6. The polarizing plate of Example 6, including a grid structurehaving a pitch of 140 nm, was formed by layering 220 nm of Al, SiO₂ and35 nm of 5 atomic percent of Fe-containing Si on the substrate in thisorder.

FIG. 29 is a graph showing absorption axis reflectances of polarizingplates with the film thickness of the dielectric layers being 2.5 nm,5.0 nm, 7.5 nm and 10.0 nm. As can be seen from FIG. 29, the wavelengthminimizing the absorption axis reflectance can be controlled by the filmthickness of the dielectric layer. In addition, since the reflectancewas reduced even if the dielectric layer film thickness was as thin as2.5 nm, the dielectric layer can be omitted depending on the wavelengthat which a low reflectance is desired.

FIG. 30 is a schematic cross sectional view of the polarizing plate ofExample 7 and FIG. 31 is an SEM image of a cross-section of thepolarizing plate of Example 7. The polarizing plate of Example 7 wasproduced as follows. Firstly, we prepared a transparent substrate havinga thickness of 0.7 mm (model name: Eagle 2000 manufactured by CorningIncorporated). Then, 15 nm of SiO₂ as a backing film, 15 nm of Ta as anabsorbing layer A, 10 nm of Si with 5% Fe as an absorbing layer B, 40 nmof SiOx as a dielectric layer and 170 nm of Al as a reflective layerwere sequentially deposited on the transparent substrate by spatteringmethod. The Si with 5% Fe was deposited by using a silicon targetcontaining 5 atomic percent of Fe.

Next, an anti-reflecting coating (BARC) was deposited on the reflectivelayer and a grid-shaped mask pattern was formed by a resist. Next, theBARC was removed by scumming process with Ar/O₂ gas, and Al was etchedwith Cl₂/BCl₃. Subsequently, a corrosion layer (chloride compound) wasremoved by H₂O plasma and the resist and the BARV were removed by O₂ashing. Finally, the reflective layer was etched with CF₄/Ar gas to formgrid-shaped convexities, thereby completing the polarizing plateincluding a grid structure having a pitch of 140 nm. The etchingconditions for the absorbing layer were 20 sccm of CF₄ gas flow rate, 4sccm of Ar gas flow rate, 0.5 Pa of CF₄/Ar gas pressure, 400 Pa ofcooling He gas pressure and 80 sec of etching time. The width of Talayer in the polarizing plate of Example 7 was almost same as the widthW of the Al layer.

FIG. 32(A) is a graph showing the optical property of the polarizingplate of Example 7 and FIG. 32(B) is a table showing average values oftransmission axis transmittance Tp, absorption axis transmittance is,contrast CR (Tp/Ts), transmission axis reflectance Rp and absorptionaxis reflectance Rs in respective wavelength ranges of red (R), green(G) and blue (B). Similarly to Example 1, the polarizing plate ofExample 7 could reduce the reflectance in a wide visible wavelengthrange as compared with the comparative example. In addition, thepolarizing plate of Example 7 could achieve a high contrast CR.

FIG. 33 is a schematic cross sectional view of the polarizing plate ofExample 8 and FIG. 34 is an SEM image of a cross-section of thepolarizing plate of Example 8. The polarizing plate of Example 8 wasproduced similarly to the polarizing plate of Example 7 except foretching conditions. The etching conditions for the absorbing layer were20 sccm of CF₄ gas flow rate, 4 sccm of Ar gas flow rate, 2.0 Pa ofCF₄/Ar gas pressure, 1000 Pa of cooling He gas pressure and 80 see ofetching time. The width of Ta layer in the polarizing plate of Example 8was formed to be narrower than the width W of the Al layer.

FIG. 35(A) is a graph showing the optical property of the polarizingplate of Example 8 and FIG. 35(B) is a table showing average values oftransmission axis transmittance Tp, absorption axis transmittance Ts,contrast CR (Tp/Ts), transmission axis reflectance Rp and absorptionaxis reflectance Rs in respective wavelength ranges of red (R), green(G) and blue (B). The polarizing plate of Example 8 could achieve areduced reflectance lower than that of Example 7 while maintaining thecontrast CR as high as that of Example 7. This was particularlyprominent in the blue wavelength range (430 nm to 510 nm),

REFERENCE SIGNS LIST

11 transparent substrate, 12 absorbing layer, 13 dielectric layer, 14reflective layer

What is claimed is:
 1. A polarizing plate comprising: a transparentsubstrate transmitting light in a used bandwidth; an absorbing layerhaving at least a metal-containing semiconductor layer containing ametal, the absorbing layer being arranged as a one-dimensional latticeshaped wire-grid structure having a pitch smaller than the wavelength ofthe light in the used bandwidth; and reflective layer arranged as aone-dimensional lattice shaped wire-grid structure having a pitchsmaller than the wavelength of light in the used bandwidth, wherein theabsorbing layer and the reflective layer are layered on the transparentsubstrate in this order, or the reflective layer and the absorbing layerare layered on the transparent substrate in this order.
 2. Thepolarizing plate according to claim 1, comprising a dielectric layerformed between the absorbing layer and the reflective layer, thedielectric layer being arranged as a one-dimensional lattice shapedwire-grid structure having a pitch smaller than the wavelength of lightin the used bandwidth.
 3. The polarizing plate according to claim 1,wherein a semiconductor of the metal-containing semiconductor isselected from the group consisting of Si, Ge, Te and ZnO, the metalcontained in the metal-containing semiconductor is a pure metal selectedfrom the group consisting of Ta, Al, Ag, Cu, Au, Mo, Cr, Ti, W, Ni, Fe,Sn and Nb or an alloy of any of those metals, and a metal content of themetal-containing semiconductor is equal to or less than 50 atomicpercent.
 4. The polarizing plate according to claim 2, wherein a widthof at least a portion of the absorbing layer or the dielectric layer isnarrower than a width of the reflective layer.
 5. The polarizing plateaccording to claim 4, wherein the absorbing layer includes a metal layerhaving a width narrower than the width of the reflective layer.
 6. Thepolarizing plate according to 5, wherein the absorbing layer is formedin the order of the metal layer and the metal-containing semiconductorlayer in the light incident direction.
 7. The polarizing plate accordingto claim 5, wherein the metal layer is a Ta layer.
 8. The polarizingplate according to claim 5, wherein the metal contained in themetal-containing semiconductor layer is Fe.
 9. The polarizing plateaccording to claim 1, wherein the absorbing layer further includes ametal layer or a semiconductor layer.
 10. The polarizing plate accordingto claim 1, wherein a semiconductor of the metal-containingsemiconductor layer is Si.
 11. The polarizing plate according to claim10, wherein the metal contained in the metal-containing semiconductorlayer is Fe.
 12. The polarizing plate according to claim 11, wherein ametal content of the metal-containing semiconductor is equal to or lessthan 50 atomic percent.
 13. The polarizing plate according to claim 11,wherein the absorbing layer further includes a Ta layer.
 14. Thepolarizing plate according to claim 13, wherein the absorbing layer isformed in the order of the Ta layer and the metal-containingsemiconductor layer in the light incident direction.
 15. The polarizingplate according to claim 14, wherein the film, thickness of themetal-containing semiconductor layer is thicker than that of the Talayer.
 16. The polarizing plate according to claim 9, wherein the metalcontained in the metal-containing semiconductor layer is Ta.
 17. Thepolarizing plate according to claim 16, wherein a Ta content of themetal-containing semiconductor is equal to or less than 40 atomicpercent.
 18. The polarizing plate according to claim 16, wherein theabsorbing layer further includes a Ta layer.
 19. The polarizing plateaccording to claim 18, wherein the absorbing layer is formed in theorder of the Ta layer and the metal-containing semiconductor layer inthe light incident direction.
 20. The polarizing plate according toclaim 19, wherein the film thickness of the metal-containingsemiconductor layer is thicker than that of the Ta layer.
 21. A methodof manufacturing a polarizing plate comprising steps of: preparing atransparent substrate transmitting light in a used bandwidth; layeringan absorbing layer having at least a metal-containing semiconductorlayer, and a reflective layer in this order or in the opposite order;and forming a one-dimensional lattice shaped wire-grid structure havinga pitch smaller than the wavelength of the light in the used bandwidthby etching.